论文成果
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current
  • 发表刊物:
    Solid-State Electronics
  • 第一作者:
    Peng Cui
  • 通讯作者:
    Yuping Zeng
  • 卷号:
    185
  • 页面范围:
    108137
  • 是否译文:
  • 发表时间:
    2021-06-01
  • 收录刊物:
    SCI

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