教师简介

崔鹏,教授,博士生导师,齐鲁青年学者。2018年6月获山东大学微电子学院博士学位。2018年7月至2021年7月在美国特拉华大学电子与计算机工程系从事博士后研究。主要研究方向为半导体器件,包括功率器件、射频器件、光电器件等,迄今为止,在本领域权威期刊发表学术论文70余篇,第一作者SCI论文27篇,申请/授权国家发明专利30项。主持国家自然科学基金、山东省优秀青年基金(海外)、山东省自然科学基金、山东省重大科技创新工程课题等多项科研项目。

每年招收博士研究生1名,硕士研究生2-3名;欢迎微电子、集成电路、物理方向的同学联系。邮箱: pcui@sdu.edu.cn;电话 0531-88362488

工作经历
  • 2021-11 — 至今
     新一代半导体集成攻关大平台  山东大学 
    教授
  • 2018-7 — 2021-7
     特拉华大学 
研究方向
论文成果

(1) 王明绪.Toward low-power-consumption source-gated phototransistor.APPLIED PHYSICS LETTERS.2024 (124)

(2) 陈思衡.Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing.Solid-State Electronics.2024,213

(3) 罗鑫.Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors.Journal of Physics and Chemistry of Solids.2024,187

(4) 张斌.The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.IEEE Transactions on Electron Devices.2024 (1)

(5) Jiang, Guangyuan.Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack.SOLID-STATE ELECTRONICS.2023,201

(6) 王鸣雁.Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT.IEEE Electron Device Letters.2023 (12)

(7) 周衡.Study on the frequency characteristics of split-gate AlGaN/GaN HFETs.Modern Physics Letters B.2023 (无)

(8) 王鸣雁.A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs.IEEE Transactions on Electron Devices.2023 :1-5

(9) 崔鹏.Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors.MICROELECTRONICS JOURNAL.2022,129 (1):105602

(10) 崔鹏.Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment.Crystals.2022,12 (11):1521

(11) 崔鹏.Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications.Scientific Reports.2022,12 (1):16683

(12) 周衡.Study of electrical transport properties of GaN-based side-gate heterostructure transistors.Applied Physics Letters.2022 (21)

(13) 王鸣雁.Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs.IEEE Electron Device Letters.2022 (12)

(14) Peng Cui.Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation.Nanomaterials .2022 (12):1718

(15) Peng Cui.Improved On/Off Current Ratio and Linearity of InAlN/GaN HEMTs with N2O Surface Treatment for Radio Frequency Application.ECS Journal of Solid State Science and Technology.2021,10 :065013

(16) Peng Cui.Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current.Solid-State Electronics.2021,185 :108137

(17) Jie Zhang.Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor.2021 Device Research Conference (DRC).2021 :1-2

(18) Peng Cui.HZO/InAlN/GaN MIS-HEMT on Silicon with SS of 60 mV/dec and fT /fmax of 115/200 GHz.2021 Device Research Conference (DRC).2021

(19) Peng Cui.Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate.Physica E: Low-dimensional Systems and Nanostructures.2021,134 :114821

(20) Jie Zhang.High-Performance, sub-2 volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics.2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).2021 :1-3

(21) Jie Zhang.One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process.IEEE Electron Device Letters.2021,42 (4):521

(22) Peng Cui.InAlN/GaN HEMT on Si with fmax = 270 GHz.IEEE Transactions on Electron Devices.2021,68 (3):994

(23) Guangyang Lin.Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate.Journal of Alloys and Compounds.2020,858 (25):157653

(24) Qi Cheng.RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon.Solid-State Electronics.2020,172 :107885

(25) Peng Cui.Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs.IEEE Electron Device Letters.2020,41 :1185

(26) Guangyang Lin.Fabrication of a polycrystalline SiGe-and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate.Semiconductor Science and Technology.2020,35 (9):095016

(27) Guangyang Lin.Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis (trifluoromethane) sulfonamide treatment.Journal of Physics D: Applied Physics.2020,53 (41):415106

(28) Jie Zhang.Ionic doping of TiO2 thin film transistors using superacid treatment.Electronic Mateiral Conference (EMC).2020

(29) Peng Cui.Enhanced Electrical Performance of Forming Gas Annealed InAlN/GaN HEMTs on Silicon with fT /fmax of 165/165 GHz.2020 Device Research Conference (DRC).2020

(30) Peng Cui.Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors.Physica E: Low-dimensional Systems and Nanostructures.2020,119 :114027

(31) Jie Zhang.Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing.IEEE Transactions on Electron Devices.2020,67 (6):2346

(32) Peng Cui.InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric.Japanese Journal of Applied Physics.2020,59 (2):020901

(33) Guangyang Lin.Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer.Journal of Physics D: Applied Physics.2019,53 (10):105103

(34) Peng Cui.Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors.Journal of Physics D: Applied Physics.2019,53 (6):065103

(35) Peng Cui.The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs.Journal of Physics D: Applied Physics.2019,52 (46):465104

(36) Peng Cui.High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg.Applied Physics Express.2019,12 (10):104001

(37) Jie Zhang.High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric.Applied Physics Express.2019,12 (9):096502

(38) Jie Zhang.Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing.IEEE Electron Device Letters.2019,40 (9):1463

(39) Kazy F Shariar.Effect of bistrifluoromethane sulfonimide treatment on nickel/InAs contacts.Applied Physics A.2019,125 :429

(40) Yuping Zeng.InAs FinFETs performance enhancement by superacid surface treatment.IEEE Transactions on Electron Devices.2019,66 (4):1856

(41) Ming Yang.Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors.Journal of Physics and Chemistry of Solids.2018,123 :223

(42) Jie Zhang.Hydrogen Silsesquioxane (HSQ) Etching Resistance Dependence on Substrate During Dry Etching.physica status solidi (a).2018,216 (1):1800530

(43) Peng Cui.Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs.Scientific Reports.2018,8 :12850

(44) Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2018,120 :389

(45) Peng Cui.Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors.Scientific reports.2018,8 :9036

(46) Peng Cui.Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors.Applied physics A-Materials Science & Processing.2018,123 :359

(47) Chen Fu.The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation.Applied Physics A.2018,124 :299

(48) Chen Fu.A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2018,113 :160

(49) Peng Cui.Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors.Scientific Reports.2018,8 :983

(50) Chen Fu.Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2017,111 :806

(51) Peng Cui.Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors.Journal of Applied Physics.2017,122 :124508

(52) Yan Liu.Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors.AIP Advances.2017,7 :085309

(53) Peng Cui.A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2017,110 :289

(54) Peng Cui.Study of Polarization Coulomb Field Scattering Influence on Improved Linearity in AlGaN/GaN Heterostructure Field-Effect Transistors.The 1st International Semiconductor Conference for Global Challenges.2017

(55) Peng Cui.Effect of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors.Chinese Physics B.2017,26 (12):127102

(56) Peng Cui.Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs.IEEE Transactions on Electron Devices.2017,64 (3):1038

(57) Yan Liu.Study of the parasitic source resistance at the different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors.Chinese Physics B.2017,26 (9):097104

(58) Huan Liu.Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2017,103 :113

(59) Peng Cui.Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2016,100 :358

(60) Ming Yang.Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering.IEEE Transactions on Electron Devices.2016,63 (10):3908

(61) Ming Yang.Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors.Journal of Applied Physics.2016,119 :224501

(62) Ming Yang.Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs.IEEE Transactions on Electron Devices.2016,63 (4):1471

(63) Jingtao Zhao.Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes.Applied physics A-Materials Science & Processing.2015,121 :1271

(64) Jingtao Zhao.A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors.Applied Physics Letter.2015,107

专利
版权所有   ©山东大学 地址:中国山东省济南市山大南路27号 邮编:250100 
查号台:(86)-0531-88395114
值班电话:(86)-0531-88364731 建设维护:山东大学信息化工作办公室