教师简介

崔鹏,研究员,博士生导师,齐鲁青年学者。2018年6月获山东大学微电子学院博士学位。2018年7月至2021年7月在美国University of Delaware电子与计算机工程系从事博士后研究。主要从事宽禁带半导体器件制备与研究,在低功耗器件、射频器件、功率放大器线性度等方面取得了一些较有影响力的国际指标性成果:首次在氮化镓(GaN)高电子迁移率场效应晶体管(无栅介质层)上实现亚阈值摆幅低于理论极限,其亚阈值摆幅可达到30 mV/dec, 为目前报道的无栅介质的GaN HEMT最低值,促进了GaN开关器件的功耗降低和尺寸缩小;制备出国际最高功率截止频率特性的GaN-on-Si 器件,其功率截止频率可达到270 GHz;研发的硅基InAlN/GaN高电子迁移率场效应晶体管以国际最高的栅长频率乘积值,被 Semiconductor Today, ScienceDaily, everything RF, UDaily等分别报道;首次确立极化库仑场散射与GaN HEMT器件线性度的关联关系,建立器件层级提高GaN功率放大器线性度的可行性方案。迄今为止,在本领域权威期刊IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Scientific Reports, Journal of Applied Physics等发表论文50余篇,其中第一作者SCI论文20篇,申请/授权国家发明专利5项。

研究概况

1. 突破氮化镓晶体管亚阈值摆幅理论极限的低功耗器件制备与研究

基于强场下沟道电子实空间转移理论,制备的InAlN/GaN 异质结场效应晶体管亚阈值摆幅平均值可达到30 mV/dec, 最小值可达到15 mV/dec,为国际上首次在GaN 异质结场效应晶体管上突破亚阈值摆幅的理论极限(60 mV/dec)。之后,采用原子层沉积系统沉积2 nm ZrO2作为栅介质层,制备出GaN基金属-绝缘层-半导体异质结场效应晶体管,其器件亚阈值摆幅平均值可达到2 mV/dec, 实现了GaN场效应晶体管亚阈值摆幅国际报道最小值。


图片2.jpg

图1. (a)制备的InAlN/GaN HEMT器件结构整体扫描电子显微镜(SEM)图。(b) 具体器件SEM结构图。其中源漏间距为2 µm,栅长100 nm。(c) 漏端电流和栅电流随栅源偏压变化曲线图。器件反向转移曲线中亚阈值摆幅平均值可达到30 mV/dec。NDR为微分负阻效应(Negative Differential Resistance)。(d) 点对点亚阈值摆幅随漏电流变化曲线图。其中点对点亚阈值摆幅最小值为15 mV/dec。(e) 电子时空间转移示意图。eGS, eGDeRST分别指栅极流向源端的电子,栅极流向漏端的电子,以及时空间转移的电子。箭头方向为电子流动方向。(f) 制备的亚阈值摆幅低于理论极限(60 mV/dec)的器件统计分布图。


2.      国际指标级高频氮化镓晶体管核心技术研究

通过采用薄的InAlN势垒层和InGaN背势垒结构,结合欧姆两步退火、氧气等离子体表面处理、T-型栅等器件工艺,我们在硅基GaN高频器件方面取得了一些较有国际影响力的研究成果。包括制备出国际最高栅长频率乘积值的硅基GaN异质结场效应晶体管,并被Semiconductor Today, ScienceDaily, everything RF, Udaily等杂志报道。制备出国际最高功率截止频率(fmax = 270 GHz)的硅基GaN异质结场效应晶体管。为降低栅极漏电,增大器件击穿电压,采用HfZrO4介质层,制备出国际最高约翰逊的品质因数的硅基GaN金属-绝缘层-半导体异质结场效应晶体管,并证实了其在Ka波段的应用。


图片 2.jpg

图2. (a)制备的InAlN/GaN HEMT器件整体结构扫描电子显微镜(SEM)平面图。(b)器件栅长为70 nm的直栅SEM图。(c)器件栅根为70 nm的T-型栅SEM图。(d)制备的InAlN/GaN HEMT 频率特性图。(f)我们制备的器件与已报道的GaN HEMT器件电流截止频率(fT)随栅长变化曲线对比图。(g)我们制备的器件与已报道的GaN-on-Si器件功率截止频率(fmax)随电流截止频率(fT)变化曲线对比图


3. 提升氮化镓功率放大器线性度的关键技术研究

通过对GaN晶体管沟道载流子散射机制的建立和分析,研究确立了极化库仑场散射与器件栅源导通电阻、跨导和线性度的关联关系,首次建立系统性的基于极化库仑场散射提高器件线性度的物理机制,该机制将载流子散射与器件势垒层材料、厚度、器件尺寸相关联,使得通过改变材料结构和器件工艺提高器件线性度成为可能。基于该理论,我们提出了一种独创性的器件层级提高GaN功率放大器线性度的方法,并有效地实现了实验上的证实。这种通过改变材料器件结构来提高功率放大器线性度的方法,具有简单、直接、可操作性强和集成度高等优点,可实现在器件层级对GaN功率放大器线性度性能的提高。


图片 3.jpg

图3. (a)不同栅宽的AlGaN/GaN HEMT输出功率、增益、附加功率效率随输入功率变化曲线图。栅宽大的器件表现出较缓的增益下降趋势。(b)测试得到的不同栅长器件1dB压缩点对应的输入功率PIN_1dB随栅源电压的变化曲线图。栅宽大的器件表现出较缓的PIN_1dB下降趋势。(c)不同栅长器件极化光学声子散射(POP)所决定的栅源导通电阻RSPOP随栅源偏压变化曲线图。(d)不同栅长器件极化库仑场散射(PCF)所决定的栅源导通电阻RSPCF随栅源偏压变化曲线图。(e)基于材料器件结构设计提高线性度的方法示意图。

论文

(1) Peng Cui.Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation.Nanomaterials .2022 (12):1718

(2) Peng Cui.Improved On/Off Current Ratio and Linearity of InAlN/GaN HEMTs with N2O Surface Treatment for Radio Frequency Application.ECS Journal of Solid State Science and Technology.2021,10 :065013

(3) Peng Cui.Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current.Solid-State Electronics.2021,185 :108137

(4) Jie Zhang.Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor.2021 Device Research Conference (DRC).2021 :1-2

(5) Peng Cui.HZO/InAlN/GaN MIS-HEMT on Silicon with SS of 60 mV/dec and fT /fmax of 115/200 GHz.2021 Device Research Conference (DRC).2021

(6) Peng Cui.Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate.Physica E: Low-dimensional Systems and Nanostructures.2021,134 :114821

(7) Jie Zhang.High-Performance, sub-2 volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics.2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).2021 :1-3

(8) Jie Zhang.One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process.IEEE Electron Device Letters.2021,42 (4):521

(9) Peng Cui.InAlN/GaN HEMT on Si with fmax = 270 GHz.IEEE Transactions on Electron Devices.2021,68 (3):994

(10) Guangyang Lin.Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate.Journal of Alloys and Compounds.2020,858 (25):157653

(11) Qi Cheng.RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon.Solid-State Electronics.2020,172 :107885

(12) Peng Cui.Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs.IEEE Electron Device Letters.2020,41 :1185

(13) Guangyang Lin.Fabrication of a polycrystalline SiGe-and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate.Semiconductor Science and Technology.2020,35 (9):095016

(14) Guangyang Lin.Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis (trifluoromethane) sulfonamide treatment.Journal of Physics D: Applied Physics.2020,53 (41):415106

(15) Jie Zhang.Ionic doping of TiO2 thin film transistors using superacid treatment.Electronic Mateiral Conference (EMC).2020

(16) Peng Cui.Enhanced Electrical Performance of Forming Gas Annealed InAlN/GaN HEMTs on Silicon with fT /fmax of 165/165 GHz.2020 Device Research Conference (DRC).2020

(17) Peng Cui.Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors.Physica E: Low-dimensional Systems and Nanostructures.2020,119 :114027

(18) Jie Zhang.Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing.IEEE Transactions on Electron Devices.2020,67 (6):2346

(19) Peng Cui.InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric.Japanese Journal of Applied Physics.2020,59 (2):020901

(20) Guangyang Lin.Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer.Journal of Physics D: Applied Physics.2019,53 (10):105103

(21) Peng Cui.Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors.Journal of Physics D: Applied Physics.2019,53 (6):065103

(22) Peng Cui.The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs.Journal of Physics D: Applied Physics.2019,52 (46):465104

(23) Peng Cui.High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg.Applied Physics Express.2019,12 (10):104001

(24) Jie Zhang.High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric.Applied Physics Express.2019,12 (9):096502

(25) Jie Zhang.Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing.IEEE Electron Device Letters.2019,40 (9):1463

(26) Kazy F Shariar.Effect of bistrifluoromethane sulfonimide treatment on nickel/InAs contacts.Applied Physics A.2019,125 :429

(27) Yuping Zeng.InAs FinFETs performance enhancement by superacid surface treatment.IEEE Transactions on Electron Devices.2019,66 (4):1856

(28) Ming Yang.Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors.Journal of Physics and Chemistry of Solids.2018,123 :223

(29) Jie Zhang.Hydrogen Silsesquioxane (HSQ) Etching Resistance Dependence on Substrate During Dry Etching.physica status solidi (a).2018,216 (1):1800530

(30) Peng Cui.Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs.Scientific Reports.2018,8 :12850

(31) Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2018,120 :389

(32) Peng Cui.Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors.Scientific reports.2018,8 :9036

(33) Peng Cui.Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors.Applied physics A-Materials Science & Processing.2018,123 :359

(34) Chen Fu.The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation.Applied Physics A.2018,124 :299

(35) Chen Fu.A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2018,113 :160

(36) Peng Cui.Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors.Scientific Reports.2018,8 :983

(37) Chen Fu.Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2017,111 :806

(38) Peng Cui.Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors.Journal of Applied Physics.2017,122 :124508

(39) Yan Liu.Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors.AIP Advances.2017,7 :085309

(40) Peng Cui.A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2017,110 :289

(41) Peng Cui.Study of Polarization Coulomb Field Scattering Influence on Improved Linearity in AlGaN/GaN Heterostructure Field-Effect Transistors.The 1st International Semiconductor Conference for Global Challenges.2017

(42) Peng Cui.Effect of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors.Chinese Physics B.2017,26 (12):127102

(43) Peng Cui.Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs.IEEE Transactions on Electron Devices.2017,64 (3):1038

(44) Yan Liu.Study of the parasitic source resistance at the different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors.Chinese Physics B.2017,26 (9):097104

(45) Huan Liu.Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2017,103 :113

(46) Peng Cui.Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors.Superlattices and Microstructures.2016,100 :358

(47) Ming Yang.Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering.IEEE Transactions on Electron Devices.2016,63 (10):3908

(48) Ming Yang.Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors.Journal of Applied Physics.2016,119 :224501

(49) Ming Yang.Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs.IEEE Transactions on Electron Devices.2016,63 (4):1471

(50) Jingtao Zhao.Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes.Applied physics A-Materials Science & Processing.2015,121 :1271

(51) Jingtao Zhao.A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors.Applied Physics Letter.2015,107

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