崔鹏，教授，博士生导师，齐鲁青年学者。2018年6月获山东大学微电子学院博士学位。2018年7月至2021年7月在美国特拉华大学电子与计算机工程系从事博士后研究。主要研究方向为半导体器件，包括功率器件、射频器件、光电器件等，迄今为止，在本领域权威期刊发表学术论文70余篇，第一作者SCI论文27篇，申请/授权国家发明专利30项。主持国家自然科学基金、山东省优秀青年基金（海外）、山东省自然科学基金、山东省重大科技创新工程课题等多项科研项目。

每年招收博士研究生1名，硕士研究生2-3名；欢迎微电子、集成电路、物理方向的同学联系。邮箱: pcui@sdu.edu.cn；电话 0531-88362488

• 2021-11 — Now
  新一代半导体集成攻关大平台山东大学
  教授
• 2018-07 — 2021-07
  特拉华大学

1. 氮化镓功率器件

2. 碳化硅功率器件

3. 氮化镓射频器件

(1)王鸣雁. Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs .Applied Physics Letters .2024 (125)

(2)王鸣雁. Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs .Applied Physics Letters .2024 (124)

(3)王鸣雁. Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs .IEEE ACCESS .2024 (12)

(4)王明绪. Toward low-power-consumption source-gated phototransistor .APPLIED PHYSICS LETTERS .2024 (124)

(5)陈思衡. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing .Solid-State Electronics .2024 ,213

(6)罗鑫. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors .Journal of Physics and Chemistry of Solids .2024 ,187

(7)张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode .IEEE Transactions on Electron Devices .2024 (1)

(8)Jiang, Guangyuan. Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack .SOLID-STATE ELECTRONICS .2023 ,201

(9)王鸣雁. Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT .IEEE Electron Device Letters .2023 (12)

(10)周衡. Study on the frequency characteristics of split-gate AlGaN/GaN HFETs .Modern Physics Letters B .2023 (无)

(11)王鸣雁. A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs .IEEE Transactions on Electron Devices .2023 :1-5

(12)崔鹏. Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors .MICROELECTRONICS JOURNAL .2022 ,129 (1):105602

(13)崔鹏. Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment .Crystals .2022 ,12 (11):1521

(14)崔鹏. Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications .Scientific Reports .2022 ,12 (1):16683

(15)周衡. Study of electrical transport properties of GaN-based side-gate heterostructure transistors .APPLIED PHYSICS LETTERS .2022 (21)

(16)王鸣雁. Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs .IEEE Electron Device Letters .2022 (12)

(17)Peng Cui. Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation .Nanomaterials .2022 (12):1718

(18)Peng Cui. Improved On/Off Current Ratio and Linearity of InAlN/GaN HEMTs with N2O Surface Treatment for Radio Frequency Application .ECS Journal of Solid State Science and Technology .2021 ,10 :065013

(19)Peng Cui. Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current .Solid-State Electronics .2021 ,185 :108137

(20)Jie Zhang. Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor .2021 Device Research Conference (DRC) .2021 :1-2

(21)Peng Cui. HZO/InAlN/GaN MIS-HEMT on Silicon with SS of 60 mV/dec and fT /fmax of 115/200 GHz .2021 Device Research Conference (DRC) .2021

(22)Peng Cui. Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate .Physica E: Low-dimensional Systems and Nanostructures .2021 ,134 :114821

(23)Jie Zhang. High-Performance, sub-2 volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics .2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) .2021 :1-3

(24)Jie Zhang. One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process .IEEE Electron Device Letters .2021 ,42 (4):521

(25)Peng Cui. InAlN/GaN HEMT on Si with fmax = 270 GHz .IEEE Transactions on Electron Devices .2021 ,68 (3):994

(26)Guangyang Lin. Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate .Journal of Alloys and Compounds .2020 ,858 (25):157653

(27)Qi Cheng. RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon .Solid-State Electronics .2020 ,172 :107885

(28)Peng Cui. Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs .IEEE Electron Device Letters .2020 ,41 :1185

(29)Guangyang Lin. Fabrication of a polycrystalline SiGe-and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate .Semiconductor Science and Technology .2020 ,35 (9):095016

(30)Guangyang Lin. Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis (trifluoromethane) sulfonamide treatment .Journal of Physics D: Applied Physics .2020 ,53 (41):415106

(31)Jie Zhang. Ionic doping of TiO2 thin film transistors using superacid treatment .Electronic Mateiral Conference (EMC) .2020

(32)Peng Cui. Enhanced Electrical Performance of Forming Gas Annealed InAlN/GaN HEMTs on Silicon with fT /fmax of 165/165 GHz .2020 Device Research Conference (DRC) .2020

(33)Peng Cui. Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors .Physica E: Low-dimensional Systems and Nanostructures .2020 ,119 :114027

(34)Jie Zhang. Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing .IEEE Transactions on Electron Devices .2020 ,67 (6):2346

(35)Peng Cui. InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric .Japanese Journal of Applied Physics .2020 ,59 (2):020901

(36)Guangyang Lin. Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer .Journal of Physics D: Applied Physics .2019 ,53 (10):105103

(37)Peng Cui. Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors .Journal of Physics D: Applied Physics .2019 ,53 (6):065103

(38)Peng Cui. The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs .Journal of Physics D: Applied Physics .2019 ,52 (46):465104

(39)Peng Cui. High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg .Applied Physics Express .2019 ,12 (10):104001

(40)Jie Zhang. High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric .Applied Physics Express .2019 ,12 (9):096502

(41)Jie Zhang. Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing .IEEE Electron Device Letters .2019 ,40 (9):1463

(42)Kazy F Shariar. Effect of bistrifluoromethane sulfonimide treatment on nickel/InAs contacts .Applied Physics A .2019 ,125 :429

(43)Yuping Zeng. InAs FinFETs performance enhancement by superacid surface treatment .IEEE Transactions on Electron Devices .2019 ,66 (4):1856

(44)Ming Yang. Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors .Journal of Physics and Chemistry of Solids .2018 ,123 :223

(45)Jie Zhang. Hydrogen Silsesquioxane (HSQ) Etching Resistance Dependence on Substrate During Dry Etching .physica status solidi (a) .2018 ,216 (1):1800530

(46)Peng Cui. Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs .Scientific Reports .2018 ,8 :12850

(47) Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2018 ,120 :389

(48)Peng Cui. Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors .Scientific reports .2018 ,8 :9036

(49)Peng Cui. Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors .Applied physics A-Materials Science & Processing .2018 ,123 :359

(50)Chen Fu. The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation .Applied Physics A .2018 ,124 :299

(51)Chen Fu. A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2018 ,113 :160

(52)Peng Cui. Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors .Scientific Reports .2018 ,8 :983

(53)Chen Fu. Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2017 ,111 :806

(54)Peng Cui. Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors .Journal of Applied Physics .2017 ,122 :124508

(55)Yan Liu. Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors .AIP Advances .2017 ,7 :085309

(56)Peng Cui. A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2017 ,110 :289

(57)Peng Cui. Study of Polarization Coulomb Field Scattering Influence on Improved Linearity in AlGaN/GaN Heterostructure Field-Effect Transistors .The 1st International Semiconductor Conference for Global Challenges .2017

(58)Peng Cui. Effect of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors .Chinese Physics B .2017 ,26 (12):127102

(59)Peng Cui. Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs .IEEE Transactions on Electron Devices .2017 ,64 (3):1038

(60)Yan Liu. Study of the parasitic source resistance at the different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors .Chinese Physics B .2017 ,26 (9):097104

(61)Huan Liu. Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2017 ,103 :113

(62)Peng Cui. Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2016 ,100 :358

(63)Ming Yang. Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering .IEEE Transactions on Electron Devices .2016 ,63 (10):3908

(64)Ming Yang. Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors .Journal of Applied Physics .2016 ,119 :224501

(65)Ming Yang. Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs .IEEE Transactions on Electron Devices .2016 ,63 (4):1471

(66)Jingtao Zhao. Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes .Applied physics A-Materials Science & Processing .2015 ,121 :1271

(67)Jingtao Zhao. A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors .Applied Physics Letter .2015 ,107

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