论文成果
Enhanced Electrical Performance of Forming Gas Annealed InAlN/GaN HEMTs on Silicon with fT /fmax of 165/165 GHz
  • 发表刊物:
    2020 Device Research Conference (DRC)
  • 全部作者:
    Meng Jia,Guangyang Lin,Jie Zhang,Lars Gundlach
  • 第一作者:
    Peng Cui
  • 通讯作者:
    Yuping Zeng
  • 是否译文:
  • 发表时间:
    2020-06-01

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