论文成果
Study of Polarization Coulomb Field Scattering Influence on Improved Linearity in AlGaN/GaN Heterostructure Field-Effect Transistors
  • 发表刊物:
    The 1st International Semiconductor Conference for Global Challenges
  • 全部作者:
    Zhaojun Lin,Chen Fu,Yan Liu,Yuanjie Lv
  • 第一作者:
    Peng Cui
  • 是否译文:
  • 发表时间:
    2017-07-01

上一条:A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

下一条:Effect of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors

版权所有   ©山东大学 地址:中国山东省济南市山大南路27号 邮编:250100 
查号台:(86)-0531-88395114
值班电话:(86)-0531-88364731 建设维护:山东大学信息化工作办公室