J. Fang, S. Yang, H. Wang, N. Tashakor, and S. M. Goetz, “Reduction of MMC capacitances through parallelization of symmetrical half-bridge submodules,” IEEE Trans. Power Electron., vol. 36, no. 8, pp. 8907–8918
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上一条: J. Fang, F. Gao, and S. M. Goetz, “Symmetries in power electronics and lattice converters,” IEEE Trans. Power Electron., in press.
下一条: J. Fang, J. Yu, Y. Zhang, and S. M. Goetz, “An estimation-based solution to weak-grid-induced small-signal stability problems of power converters,” IEEE J. Emerg. Sel. Topics Power Electron., vol. 9, no. 4, pp. 4558–4572