J. Fang, F. Gao, and S. M. Goetz, “Symmetries in power electronics and lattice converters,” IEEE Trans. Power Electron., in press.
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论文类型：期刊论文
是否译文：否
发表时间：2022-08-01
收录刊物：SCI
发表时间：2022-08-01
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下一条： J. Fang, S. Yang, H. Wang, N. Tashakor, and S. M. Goetz, “Reduction of MMC capacitances through parallelization of symmetrical half-bridge submodules,” IEEE Trans. Power Electron., vol. 36, no. 8, pp. 8907–8918