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Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:CrystEngComm

  • First Author:刘磊

  • Document Code:DA60497533284E7981D34A73964DAA73

  • Issue:24

  • Page Number:1840

  • Number of Words:5000

  • Translation or Not:no

  • Date of Publication:2022-02-03

  • Date of Publication:2022-02-03
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