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Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:CRYSTENGCOMM

  • First Author:刘磊

  • Document Code:C3867FFABC184F9BB1BBACD5493F69E6

  • Volume:23

  • Issue:41

  • Page Number:7245

  • Translation or Not:no

  • Date of Publication:2021-10-25

  • Date of Publication:2021-10-25
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