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    Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

    • Journal:CRYSTENGCOMM

    • First Author:刘磊

    • Document Code:C3867FFABC184F9BB1BBACD5493F69E6

    • Volume:23

    • Issue:41

    • Page Number:7245

    • Translation or Not:No

    • Date of Publication:2021-10

    • Release Time:2022-06-05
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