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Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:CRYSTENGCOMM

  • First Author:刘磊

  • Document Code:52AE4BFE08514483BC24200655DD68FB

  • Volume:24

  • Issue:10

  • Page Number:1840

  • Translation or Not:no

  • Date of Publication:2022-03-07

  • Date of Publication:2022-03-07
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