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    Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

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    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Title of Paper:Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

    • Journal:CRYSTENGCOMM

    • First Author:杨祥龙

    • Document Code:2E6077265C5949209BF66E69849ED035

    • Issue:43

    • Page Number:6957

    • Number of Words:2000

    • Translation or Not:No

    • Date of Publication:2018-11

    • Release Time:2022-10-29
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