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Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:Applied Optics

  • First Author:肖龙飞

  • Document Code:7F9BBC411F9045D780AA79B2F19ACE54

  • Issue:11

  • Page Number:2804

  • Number of Words:4000

  • Translation or Not:no

  • Date of Publication:2018-04-10

  • Date of Publication:2018-04-10
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