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    Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder

    • Journal:CrystEng Comm

    • First Author:仲光磊

    • Document Code:25FCCCAEF2E040C2B6642D5F6FCDC3EA

    • Issue:44

    • Page Number:7690

    • Number of Words:5000

    • Translation or Not:No

    • Date of Publication:2022-10

    • Release Time:2023-05-25
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