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    Origins and characterization techniques of stress in SiC crystals: A review

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Origins and characterization techniques of stress in SiC crystals: A review

    • Journal:PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS

    • First Author:田佳奇

    • Document Code:7A7738E137AC4784903C8174DE36FE3A

    • Issue:70

    • Number of Words:3000

    • Translation or Not:No

    • Date of Publication:2024-02

    • Release Time:2024-05-16
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