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    Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth

    • Journal:19th China International Forum on Solid State Lighting and 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022

    • First Author:胡国杰

    • Document Code:1655407611637108738

    • Page Number:140-142

    • Number of Words:3000

    • Translation or Not:No

    • Date of Publication:2023-01

    • Release Time:2024-05-18
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