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    Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

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    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Title of Paper:Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

    • Journal:VACUUM

    • First Author:胡国杰

    • Document Code:1754450207846453250

    • Volume:222

    • Number of Words:3000

    • Translation or Not:No

    • Date of Publication:2024-04

    • Release Time:2024-05-18
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