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Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:IEEE Electron Device Letters

  • First Author:王新宇

  • Document Code:1806576903362662402

  • Number of Words:3

  • Translation or Not:no

  • Date of Publication:2024-08-10

  • Date of Publication:2024-08-10
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