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HUImcM83RsKoVKPt1qywcKmMI1y7WApxFeCp6KpzdqAZF1DI4pJHTq1eMC3B
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    Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode

    • Journal:IEEE Electron Device Letters

    • First Author:王新宇

    • Document Code:1806576903362662402

    • Number of Words:3

    • Translation or Not:No

    • Date of Publication:2024-08

    • Release Time:2024-09-15
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