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Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:Journal of Electronic Materials

  • First Author:邵宏宇

  • Document Code:1770025704663310337

  • Number of Words:3000

  • Translation or Not:no

  • Date of Publication:2024-03-06

  • Date of Publication:2024-03-06
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