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    SiC 单晶生长初期表面台阶及微管特性

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    • Institution:新一代半导体材料研究院

    • Title of Paper:SiC 单晶生长初期表面台阶及微管特性

    • Journal:硅酸盐学报

    • First Author:仲光磊

    • Document Code:C9837A4B207D4FA39ED4D2F1AAB0891E

    • Issue:8

    • Number of Words:3000

    • Translation or Not:No

    • Date of Publication:2022-08

    • Release Time:2024-10-11
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