中文

Dislocation proliferation at the growth crystal seed interface of physical vapor transport grown 4H-SiC crystals

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:Physica Script

  • First Author:李华东

  • Document Code:FF0C35DE99D1460F9614190109978DC8

  • Issue:99

  • Number of Words:3000

  • Translation or Not:no

  • Date of Publication:2024-08-16

  • Date of Publication:2024-08-16

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