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    Dislocation proliferation at the growth crystal seed interface of physical vapor transport grown 4H-SiC crystals

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Dislocation proliferation at the growth crystal seed interface of physical vapor transport grown 4H-SiC crystals

    • Journal:PHYSICA SCRIPTA Journal

    • First Author:李华东

    • Document Code:FF0C35DE99D1460F9614190109978DC8

    • Issue:99

    • Number of Words:3000

    • Translation or Not:No

    • Date of Publication:2024-08

    • Release Time:2024-10-11
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