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    Threading dislocation classification for 4H-SiC substrates using the KOH etching method

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Threading dislocation classification for 4H-SiC substrates using the KOH etching method

    • Journal:CrystEngComm

    • First Author:崔潆心

    • Document Code:211BA6B55A17470D85B2CA4D878772A1

    • Issue:7

    • Page Number:978

    • Number of Words:2

    • Translation or Not:No

    • Date of Publication:2018-02

    • Release Time:2025-05-24
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