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Threading dislocation classification for 4H-SiC substrates using the KOH etching method

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:CrystEngComm

  • First Author:崔潆心

  • Document Code:211BA6B55A17470D85B2CA4D878772A1

  • Issue:7

  • Page Number:978

  • Number of Words:2

  • Translation or Not:no

  • Date of Publication:2018-02-21

  • Date of Publication:2018-02-21
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