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    Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination

    • Journal:MICROELECTRONICS JOURNAL

    • First Author:王新宇

    • Document Code:B553EB6CF2E14F2F938DCAF7AB87DCE3

    • Issue:161

    • Page Number:106732

    • Number of Words:5000

    • Translation or Not:No

    • Date of Publication:2025-05

    • Release Time:2025-05-16
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