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Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:MICROELECTRONICS JOURNAL

  • First Author:王新宇

  • Document Code:B553EB6CF2E14F2F938DCAF7AB87DCE3

  • Issue:161

  • Page Number:106732

  • Number of Words:5000

  • Translation or Not:no

  • Date of Publication:2025-05-13

  • Date of Publication:2025-05-13
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