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一种掺锗SiC体单晶材料的生长方法

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  • Affilication of Author(s):晶体材料研究所

  • Disigner of the Invention:chenxiufang,xuxiangang

  • Application Number:2016100455044

  • Number of Inventors:3

  • Service Invention or Not:no

  • Application Date:2016-01-22

  • Application Date:2016-01-22
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