中文
Home > Scientific Research > Patents

一种低应力高纯半绝缘SiC单晶的制备方法

Hits:

  • Affilication of Author(s):晶体材料研究所

  • Disigner of the Invention:chenxiufang,xuxiangang,pengyan

  • Application Number:2016103085373

  • Number of Inventors:4

  • Service Invention or Not:no

  • Application Date:2016-05-10

  • Application Date:2016-05-10
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University		 Click:
  MOBILE Version

The Last Update Time:..