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一种偏轴衬底用SiC晶体的生长及高电学均匀性的N型SiC衬底的制备方法

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  • Affilication of Author(s):晶体材料研究所

  • Disigner of the Invention:pengyan,xuxiangang,chenxiufang

  • Application Number:2016103894895

  • Number of Inventors:4

  • Service Invention or Not:no

  • Application Date:2016-06-04

  • Application Date:2016-06-04
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