中文

在大直径6H-SiC碳面上生长石墨烯的方法

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  • Affilication of Author(s):晶体材料研究所

  • Disigner of the Invention:chenxiufang,xuxiangang

  • Application Number:201010541290.2

  • Number of Inventors:3

  • Service Invention or Not:no

  • Application Date:2010-11-12

  • Application Date:2010-11-12

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