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    一种大直径SiC单晶生长装置及生长方法

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    • Title:一种大直径SiC单晶生长装置及生长方法

    • Institution:新一代半导体材料研究院

    • Type of Patent:Invent

    • Application Number:202210227495.6

    • Number of Inventors:5

    • Service Invention or Not:No

    • Application Date:2022-03-08

    • Publication Date:2023-07-07

    • Authorization Date:2023-07-07

    • Release Time:2023-09-07
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