Paper Publications
Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction
Release Time:2021-06-02| Hits:
Institution:集成电路学院
Title of Paper:Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction
Journal:JOURNAL OF LUMINESCENCE Journal
First Author:时凯居
Document Code:E69B56299AC14B35A72BF74A6AC8870C
Volume:223
Number of Words:3
Translation or Not:No
Date of Publication:2020-07
Release Time:2021-06-02
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University