Ji Ziwu
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Paper Publications
Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction
2020-07-01 Hits:
Affiliation of Author(s):微电子学院
Journal:JOURNAL OF LUMINESCENCE Journal
First Author:时凯居
Indexed by:Unit Twenty Basic Research
Document Code:E69B56299AC14B35A72BF74A6AC8870C
Volume:223
Translation or Not:no
Date of Publication:2020-07-01
Date of Publication:2020-07-01
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