cumvWGuEP0F69qwr9ULKSj2U7xhLw0Qo4TSsBkVQfPxKiqZYJAJeWw2K7Do3

Ji Ziwu

Click:

The Last Update Time:..

Recommended Ph.D.Supervisor Recommended MA Supervisor

Current position: Home > Scientific Research > Paper Publications

Paper Publications

Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure
Release Time:2021-06-02| Hits:

Institution:集成电路学院
Title of Paper:Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure
Journal:Physica E-Low-Dimensional Systems & Nanostructures
First Author:时凯居
Document Code:DC80AA5CA1FF477A8D8BD56F8FB81D11
Volume:119
Number of Words:3
Translation or Not:No
Date of Publication:2020-05
Release Time:2021-06-02

Prev One:Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction

Next One:Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University