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Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate
2020-01-10  Hits:

Affiliation of Author(s):集成电路学院
Journal:Scientific Reports
First Author:李长富
Document Code:34BFCCC1B4584A8EB05F63E49290BA3D
Volume:10
Issue:1
Number of Words:4
Translation or Not:no
Date of Publication:2020-01-10
Date of Publication:2020-01-10

Pre One:Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure

Next One:"Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation

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