Ji Ziwu
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Paper Publications
- [57] Ji Ziwu. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells. Optics Express, 20, 3932, 2012.
- [58] Ji Ziwu. The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide. Adv. Mater. Res., 2012.
- [59] Ji Ziwu. Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature. Chinese Physics B, 2012.
- [60] Ji Ziwu. Annealing effect and photoluminescence properties in Tm+-implanted ZnO crystal. Nucl. Instrum. Meth. B, 2012.
- [61] Ji Ziwu. A weak electron transporting material with high triplet energy and thermal stability via a super twisted structure for high efficient blue electrophosphorescent devices. 《J. Mater. Chem.》, 2011.
- [62] Optical properties of exciton and charged exciton in undoped ZnSe/BeTe type-II quantum wells under high magnetic fields，Acta. Phys. Sin-Ch. Ed.. Acta. Phys. Sin-Ch. Ed, 60, 047805, 2011.
- [63] Yujun Zheng and Ji Ziwu. 超强磁场下非掺杂ZnSe/BeTe II型量子阱中激子和带电激子的光学特性. 物理 学 报 Acta Phys. Sin., 2011.
- [64] Yujun Zheng and Ji Ziwu. ZnSe/BeTe II型量子阱中界面结构对发光特性的影响. 物理 学 报 Acta Phys. Sin., 2010.
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