Paper Publications
- [65] Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells. Chin. Phys. B, 19, 117303, 2010.
- [66] Interface structure effects on optical property of undoped ZnSe/BeTe type-ΙΙ quantum wells. Acta. Phys. Sin-Ch. Ed, 59, 7986, 2010.
- [67] Ji Ziwu and Yujun Zheng. Statistical properties of single molecule under stochastic gating. J. At. Mol. Sci., 1, 280, 2010.
- [68] Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density. Semicond. Sci. Technol., 24, 095016, 2009.
- [69] Ji Ziwu. Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density. Semiconductor Science and Technology, 24, 095016, 2009.
- [70] Ji Ziwu and Yujun Zheng. Photon Counting Statistics of Single Molecules in Solid Matrix. J Chem Phys, 2009.
- [71] Spatially direct charged exciton photoluminescence in undoped ZnSe/BeTe type-II quantum wells. Appl. Phys. Lett., 92, 093107, 2008.
- [72] Magnetic field effect of charged excitons in n-doped ZnSe/BeTe type-II quantum wells. Acta. Phys. Sin-Ch. Ed., 57, 6609-05, 2008.
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