Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
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- Institution:
- 微电子学院
- Title of Paper:
- Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- Superlattices and Microstructures
- First Author:
- 付晨
- All the Authors:
- 林兆军
- Document Code:
- 9AD58E32C9FD442592342BDEB77341DC
- Volume:
- 111
- Page Number:
- 806
- Translation or Not:
- No
- Date of Publication:
- 2017-11
- Release Time:
- 2019-04-14