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Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Superlattices and Microstructures
All the Authors:
linzhaojun
First Author:
付晨
Indexed by:
综合研究
Document Code:
9AD58E32C9FD442592342BDEB77341DC
Volume:
111
Page Number:
806
Translation or Not:
no
Date of Publication:
2017-11-01