Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
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- Institution:
- 微电子学院
- Title of Paper:
- Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
- Journal:
- Chinese Physics B
- First Author:
- 崔鹏
- All the Authors:
- 林兆军
- Document Code:
- B77CB16F9B4B4F9ABB3EBB10DEAE1AD4
- Volume:
- 26
- Issue:
- 12
- Translation or Not:
- No
- Date of Publication:
- 2017-12
- Release Time:
- 2019-04-14