Paper Publications

Home

Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors

Release time:2019-04-14
Hits:
Affiliation of Author(s):
微电子学院
Journal:
Chinese Physics B
All the Authors:
linzhaojun
First Author:
cuipeng
Indexed by:
综合研究
Document Code:
B77CB16F9B4B4F9ABB3EBB10DEAE1AD4
Volume:
26
Issue:
12
Translation or Not:
no
Date of Publication:
2017-12-01