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Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Superlattices and Microstructures
Indexed by:
综合研究
Document Code:
lw-173310
Volume:
85
Translation or Not:
no
Date of Publication:
2015-05-15