Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- Superlattices and Microstructures
- Document Code:
- lw-173310
- Volume:
- 85
- Translation or Not:
- No
- Date of Publication:
- 2015-05
- Release Time:
- 2019-04-14