Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- Superlattices and Microstructures
- Indexed by:
- 综合研究
- Document Code:
- lw-173310
- Volume:
- 85
- Translation or Not:
- no
- Date of Publication:
- 2015-05-15