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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Chinese Physics B
Indexed by:
综合研究
Document Code:
lw-173326
Volume:
24
Issue:
11
Translation or Not:
no
Date of Publication:
2015-10-09