A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- APPLIED PHYSICS LETTERS
- First Author:
- 赵景涛
- All the Authors:
- 林兆军
- Document Code:
- lw-173243
- Volume:
- 107
- Page Number:
- 113502
- Translation or Not:
- No
- Date of Publication:
- 2015-09
- Release Time:
- 2019-10-24