A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors
Release time:2019-10-24
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- Affiliation of Author(s):
- 集成电路学院
- Journal:
- APPLIED PHYSICS LETTERS
- All the Authors:
- linzhaojun
- First Author:
- 赵景涛
- Indexed by:
- 综合研究
- Document Code:
- lw-173243
- Volume:
- 107
- Page Number:
- 113502
- Translation or Not:
- no
- Date of Publication:
- 2015-09-15