Effects of GaN cap layer thickness on an AlN/GaN heterostructure
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Effects of GaN cap layer thickness on an AlN/GaN heterostructure
- Journal:
- Chinese Physics B
- First Author:
- 赵景涛
- All the Authors:
- 林兆军
- Document Code:
- lw-164566
- Volume:
- 23
- Page Number:
- 127104
- Number of Words:
- 2
- Translation or Not:
- No
- Date of Publication:
- 2014-10
- Release Time:
- 2019-10-24