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Effects of GaN cap layer thickness on an AlN/GaN heterostructure

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Chinese Physics B
All the Authors:
linzhaojun
First Author:
赵景涛
Indexed by:
综合研究
Document Code:
lw-164566
Volume:
23
Page Number:
127104
Number of Words:
2
Translation or Not:
no
Date of Publication:
2014-10-10