Effects of GaN cap layer thickness on an AlN/GaN heterostructure
Release time:2019-10-24
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- Chinese Physics B
- All the Authors:
- linzhaojun
- First Author:
- 赵景涛
- Indexed by:
- 综合研究
- Document Code:
- lw-164566
- Volume:
- 23
- Page Number:
- 127104
- Number of Words:
- 2
- Translation or Not:
- no
- Date of Publication:
- 2014-10-10