The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Release Time:2019-10-24
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- Institution:
- 集成电路学院
- Title of Paper:
- The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
- Journal:
- Journal of Semiconductors
- First Author:
- 于英霞
- All the Authors:
- 林兆军
- Document Code:
- lw-164576
- Volume:
- 35
- Issue:
- 12
- Page Number:
- 124007
- Number of Words:
- 3
- Translation or Not:
- No
- Date of Publication:
- 2014-07
- Release Time:
- 2019-10-24