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The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Journal of Semiconductors
All the Authors:
linzhaojun
First Author:
于英霞
Indexed by:
综合研究
Document Code:
lw-164576
Volume:
35
Issue:
12
Page Number:
124007
Number of Words:
3
Translation or Not:
no
Date of Publication:
2014-07-08