The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Release time:2019-10-24
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- Journal of Semiconductors
- All the Authors:
- linzhaojun
- First Author:
- 于英霞
- Indexed by:
- 综合研究
- Document Code:
- lw-164576
- Volume:
- 35
- Issue:
- 12
- Page Number:
- 124007
- Number of Words:
- 3
- Translation or Not:
- no
- Date of Publication:
- 2014-07-08