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A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Superlattices and Microstructures,
All the Authors:
linzhaojun
First Author:
赵景涛
Indexed by:
综合研究
Document Code:
lw-173260
Volume:
79
Page Number:
21
Translation or Not:
no
Date of Publication:
2014-12-23