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Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Chinese Physics B
All the Authors:
linzhaojun
First Author:
刘艳
Indexed by:
综合研究
Document Code:
C35C3AC632D94246822701F80872F058
Volume:
26
Issue:
9
Translation or Not:
no
Date of Publication:
2017-09-01