The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
Release Time:2021-12-08
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- Institution:
- 集成电路学院
- Title of Paper:
- The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
- Journal:
- Superlattices and Microstructures
- First Author:
- 姜光远
- Document Code:
- 5E482A189F6B44C8995A6AD6C969E16D
- Volume:
- 156
- Translation or Not:
- No
- Date of Publication:
- 2021-08
- Release Time:
- 2021-12-08