Paper Publications

Home

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

Release time:2021-12-09
Hits:
Affiliation of Author(s):
微电子学院
Journal:
SCIENTIFIC REPORTS
First Author:
刘阳
Indexed by:
Unit Twenty Basic Research
Document Code:
9E5379E96DF4444ABA017B4CD9E0DCD7
Volume:
11
Issue:
1
Translation or Not:
no
Date of Publication:
2021-11-17