A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
Release Time:2021-12-09
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
- Journal:
- Scientific Reports
- First Author:
- 刘阳
- Document Code:
- 9E5379E96DF4444ABA017B4CD9E0DCD7
- Volume:
- 11
- Issue:
- 1
- Translation or Not:
- No
- Date of Publication:
- 2021-11
- Release Time:
- 2021-12-09
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