A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
Release time:2021-12-09
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- SCIENTIFIC REPORTS
- First Author:
- 刘阳
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- 9E5379E96DF4444ABA017B4CD9E0DCD7
- Volume:
- 11
- Issue:
- 1
- Translation or Not:
- no
- Date of Publication:
- 2021-11-17
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