The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
发布时间：2021-12-08
点击次数：
- 所属单位：
- 集成电路学院
- 发表刊物：
- Physica E-Low-Dimensional Systems & Nanostructures
- 第一作者：
- 姜光远
- 论文编号：
- 5F0FB0BBE00D44A9B4CAA42287AA8F94
- 卷号：
- 127
- 是否译文：
- 否
- 发表时间：
- 2021-03-01
- 上一条：The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
- 下一条：Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method