LI Yuan, PhD, IEEE Senior Member. Dr. LI obtained his BS in Physics and PhD in Condensed-Matter Physics from Shandong University in 2004 and 2009, respectively. He was a Postdoctoral Fellow at Georgia Institute of Technology in US (with Prof. Jean-Luc Bredas) from 2010 to 2014, and then he moved with the same research group to KAUST (King Abdullah University of Science and Technology) in Saudi Arabia, working as a Research Scientist from 2014 to 2016. He joined the faculty of Shandong University in 2017, working as an Associate Professor at the School of Information Science and Engineering. His research is mainly focused on advanced micro/nano-electronic materials and devices for application in the post-Moore's Law era. He has coauthored more than 100 research papers published in peer-reviewed Journals and Conferences. He works as the PI of 3 research grants funded by the National Natural Science Foundation of China (NSFC). He also works as an independent Reviewer for NSFC and more than 10 peer-reviewed Journals, including Science Advances, Physical Review Letters, Physical Review B, Applied Physics Letters, Chemistry of Materials.

Research Field

Advanced Micro/Nano-Electronic Materials and Devices

Selected Papers（with * the corresponding authors）

Books & Review Papers

[1] Y. Li, V. Coropceanu, and J. L. Brédas, Chapter 7: Charge Transport in Crystalline Organic Semiconductors. in Organic Semiconductors: Basic Concepts. ISBN13:9789814699228, World Scientific, Singapore (2016). (Book Chapter)

[2] V. Coropceanu*, Y. Li, Y. P. Yi, L. Y. Zhu, and J. L. Brédas, Intrinsic Charge Transport in Single Crystals of Organic Molecular Semiconductors: A Theoretical Perspective. MRS Bull. 38, 57 (2013).

Research Papers (last 5 years)

[1] K. L. Cai, Y. Li*, G. Z. Yi, G. H. Yang, D. Geng, L. Li, J. Yu*, and A. Nathan*, Impact of Density of States on the Characteristics of Channel-All-Around InGaZnO Field-Effect Transistors. IEEE Trans. Electron Devices. 72, 690 (2025).

[2] G. Z. Yi, Y. Li*, K. L. Cai, J. Yu*, and A. Nathan*, On a Mott Formalism for Modeling Oxide Thin-Film Transistors. Appl. Phys. Lett. 125, 033501 (2024). (Genetic device model for TFTs, Editor's Pick)

[3] K. Y. Liu, F. Lu, and Y. Li*, Bias-Independent Subthreshold Swing in Ballistic Cold-Source Field-Effect Transistors by Drain Density-of-States Engineering. Appl. Phys. Lett. 124, 053504 (2024). (Optimization model for cold-source FETs)

[4] X. M. Li and Y. Li*, Toward Nanoscale Organic Tunnel Field-Effect Transistors with Small Subthreshold Swing and High On-State Current: A Computational Design Based on Two-Dimensional Covalent-Organic Frameworks. ACS Appl. Nano Mater. 7, 1526 (2024). (Design of an organic TFET)

[5] P. P. Sang, Q. W. Wang, J. X. Wu, G. Z. Yi, Y. Li*, and J. Z. Chen*, Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications. ACS Appl. Nano Mater. 6, 6849 (2023).

[6] P. P. Sang, Q. W. Wang, G. Z. Yi, J. X. Wu, Y. Li*, and J. Z. Chen*, Tunable Electrical Contacts in Two-Dimensional Silicon Field-Effect Transistors: The Significance of Surface Engineering. Appl. Surf. Sci. 614, 156170 (2023).

[7] A. Fu, G. Z. Yi, and Y. Li*, Phonon-Limited Electron Transport in a Highly-Conductive Two-Dimensional Covalent Organic Framework: A Computational Study. J. Phys. Chem. C 126, 20127 (2022).

[8] X. X. Gong, L. J. Xu, P. P. Sang, Y. Li*, and J. Z. Chen, Organic Steep-Slope Nano-FETs: A Rational Design Based on Two-Dimensional Covalent-Organic Frameworks. Org. Electron. 100, 106379 (2022). (Design of an organic cold-source FET)

[9] P. P. Sang, Q. W. Wang, W. Wei, Y. Li*, and J. Z. Chen*, Hydrogenated Borophene as a Promising Two-Dimensional Semiconductor for Nanoscale Field-Effect Transistors: A Computational Study. ACS Appl. Nano Mater. 4, 11931 (2021).

[10] P. P. Sang, Q. W. Wang, W. Wei, F. Wang, Y. Li*, and J. Z. Chen*, Semiconducting Silicene: A Two-Dimensional Silicon Allotrope with Hybrid Honeycomb-Kagome Lattice. ACS Materials Lett. 3, 1181 (2021). (Design of a novel silicene semiconductor)