LI Yuan

Doctor

Postgraduate (Doctoral)

Shandong University

    Personal Information

    Gender:Male
    Date of Employment:2017-12

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Personal Profile

        LI Yuan, PhD, IEEE Senior Member. Dr. LI obtained his BS in Physics and PhD in Condensed-Matter Physics from Shandong University in 2004 and 2009, respectively. He was a Postdoctoral Fellow at Georgia Institute of Technology in US (with Prof. Jean-Luc Bredas) from 2010 to 2014, and then he moved with the same research group to KAUST (King Abdullah University of Science and Technology) in Saudi Arabia, working as a Research Scientist from 2014 to 2016. He joined the faculty of Shandong University in 2017, working as an Associate Professor at the School of Information Science and Engineering. His research is mainly focused on advanced micro/nanoelectronic devices and materials for application in the post-Moore's Law era. He has coauthored more than 120 research papers published in peer-reviewed Journals and Conferences. He works as the PI of 4 research grants funded by the National Natural Science Foundation of China (NSFC). He also works as an independent Reviewer for NSFC and more than 10 peer-reviewed Journals, including Science Advances, Physical Review Letters, Physical Review B, Applied Physics Letters, Chemistry of Materials.


Research Field

Advanced Micro/Nanoelectronic Devices and Materials 

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Selected Papers(with * the corresponding authors

Books & Review Papers

[1] Y. Li*, G. Z. Yi, K. L. Cai, W. X. Wang, J. Yu*, and A. Nathan*, A Review of Physics-Based Compact Modeling of Amorphous InGaZnO Thin-Film Transistors. IEEE Electron Devices Reviews 3, 189 (2026).

[2] Y. Li, V. Coropceanu, and J. L. Brédas, Chapter 7: Charge Transport in Crystalline Organic Semiconductors. in Organic Semiconductors: Basic Concepts. ISBN13:9789814699228, World Scientific, Singapore (2016)(Book Chapter)

[3] V. Coropceanu*, Y. Li, Y. P. Yi, L. Y. Zhu, and J. L. Brédas, Intrinsic Charge Transport in Single Crystals of Organic Molecular Semiconductors: A Theoretical Perspective. MRS Bull. 38, 57 (2013).


Research Papers (last 5 years)

[1] P. Servati*, Y. Li*, A. Servati, W. I. Milne, and A. Nathan, Anisotropic and Isotropic Piezoresistance in Amorphous Thin Film TransistorsIEEE Open Journal on Immersive Displays 3, 36 (2026).

[2] L. H. Wang, S. M. Wang, J. X. Zhang, X. M. Li, and Y. Li*Enhancement of On-State Current in Two-Dimensional Tunnel Field-Effect Transistors by Computational Design of Interfacial van der Waals Defect StatesACS Appl. Nano Mater. 8, 24057 (2025).

[3] Y. Li*, G. Z. Yi, H. B. Ma, W. X. Wang, K. L. Cai, J. Yu*, S. Saha, and A. Nathan, CAM-XT: A Physics-Based Compact Thin-Film Transistor Modeling Tool for Circuit Analysis. IEEE Open Journal on Immersive Displays 2, 166 (2025).

[4] G. Z. Yi, Y. Li*, N. D. Lu, G. H. Yang, D. Geng, L. Li, J. Yu*, and A. Nathan*, An Analytical Device Model for Vertical Channel-All-Around InGaZnO Thin-Film TransistorsIEEE Trans. Electron Devices. 72, 3790 (2025).

[5] K. L. Cai, Y. Li*, G. Z. Yi, G. H. Yang, D. Geng, L. Li, J. Yu*, and A. Nathan*, Impact of Density of States on the Characteristics of Channel-All-Around InGaZnO Field-Effect TransistorsIEEE Trans. Electron Devices. 72, 690 (2025).

[6] G. Z. Yi, Y. Li*, K. L. Cai, J. Yu*, and A. Nathan*, On a Mott Formalism for Modeling Oxide Thin-Film TransistorsAppl. Phys. Lett. 125, 033501 (2024). (Editor's Pick)

[7] K. Y. Liu, F. Lu, and Y. Li*, Bias-Independent Subthreshold Swing in Ballistic Cold-Source Field-Effect Transistors by Drain Density-of-States EngineeringAppl. Phys. Lett. 124, 053504 (2024).

[8] X. M. Li and Y. Li*, Toward Nanoscale Organic Tunnel Field-Effect Transistors with Small Subthreshold Swing and High On-State Current: A Computational Design Based on Two-Dimensional Covalent-Organic FrameworksACS Appl. Nano Mater. 7, 1526 (2024). (Design of an organic TFET)

[9] A. Fu, G. Z. Yi, and Y. Li*Phonon-Limited Electron Transport in a Highly-Conductive Two-Dimensional Covalent Organic Framework: A Computational StudyJ. Phys. Chem. C 126, 20127 (2022).

[10] X. X. Gong, L. J. Xu, P. P. Sang, Y. Li*, and J. Z. Chen, Organic Steep-Slope Nano-FETs: A Rational Design Based on Two-Dimensional Covalent-Organic FrameworksOrg. Electron. 100, 106379 (2022).

2000.09  to  2004.06
Shandong University | Physics | Bachelor's Degree in Science
2004.09  to  2009.06
Shandong University | Condensed Matter Physics | Doctoral Degree in Science

2014.09  to  2016.12
 King Abdullah University of Science and Technology (KAUST) 
2010.01  to  2014.07
 Georgia Institute of Technology 
2009.07  to  2009.12
 东南大学 

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Research Group

Name of Research Group:大面积电子集成策略中心

Description of Research Group:由中国科学院外籍院士、英国皇家工程院院士、加拿大工程院院士、美国国家发明家科学院院士、中国友谊奖获得者Arokia Nathan院士担任中心主任的科研中心。研究方向包括基于新型材料的薄膜晶体管器件、集成电路、芯片系统,应用于各个传感及显示等领域。团队旨在解决微电子产品低制造成本和多功能系统集成的技术壁垒,并规范集成芯片系统在生产和制造工艺方面的行业标准。扩大中国创新研究在世界范围的影响力,开拓新的产品与市场。