Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric
- Journal:
- Applied physics letters
- First Author:
- Pengfei Ma
- Correspondence Author:
- Yuxiang Li,Aimin Song
- All the Authors:
- Jiamin Sun,Guangda Liang,Yunpeng Li,Qian Xin
- Indexed by:
- Applied Research
- Document Code:
- BCE60C230EC744E29AE7416AA84BAF14
- Volume:
- 113
- Issue:
- 6
- Translation or Not:
- No
- Date of Publication:
- 2018-08
- Release Time:
- 2019-04-14