Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
Release Time:2019-10-24
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- Institution:
- 微电子学院
- Title of Paper:
- Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
- Journal:
- IEEE Transactions on Electron Devices
- First Author:
- Yiming Wang,王一鸣
- Correspondence Author:
- Aimin Song
- All the Authors:
- 王卿璞,Li Yuxiang,Shi Yanpeng,王一鸣,Song A M,辛倩,Jin Yang,Hanbin Wang,Jiawei Zhang,He Li,Gengchang Zhu,Yanpeng Shi,Yuxiang Li,Qingpu Wang,Qian Xin,Zhongchao Fan,Fuhua Yang
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- C5CBECE11DEA4D5F8D7D91066B25046F
- Volume:
- 65
- Issue:
- 4
- Page Number:
- 1377
- Translation or Not:
- No
- Date of Publication:
- 2018-04
- Release Time:
- 2019-10-24