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High-Performance InGaZnO-Based ReRAMs

Release Time:2019-10-24
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Institution:
微电子学院
Title of Paper:
High-Performance InGaZnO-Based ReRAMs
Journal:
IEEE Transactions on Electron Devices
First Author:
Pengfei Ma,马鹏飞
Correspondence Author:
Yuxiang Li,Aimin Song
All the Authors:
Song A M,Li Yuxiang,辛倩,王一鸣,Guangda Liang,Yiming Wang,Yunpeng Li,Qian Xin
Indexed by:
Unit Twenty Basic Research
Document Code:
30A3D463D46B446FAF932289DEB289FE
Volume:
66
Issue:
6
Page Number:
2600
Translation or Not:
No
Date of Publication:
2019-06
Release Time:
2019-10-24