Title : Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD
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Affiliation of Author(s):物理学院
Title of Paper:Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD
Journal:Materials Research Bulletin
First Author:马瑾
Document Code:lw-102410
Volume:47
Issue:2
Page Number:253
Number of Words:3
Translation or Not:no
Date of Publication:2012-01-10
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